@INPROCEEDINGS{ReRAM_IEDM2010_Kim,
author={ Kim, M.J. and others},
booktitle={Proc. of IEEE Int. Electron Devices Meeting (IEDM)},
title={Low Power Operating Bipolar {TMO} {ReRAM} for Sub 10 nm Era},
year={2010},
month={Dec},
volume={},
number={},
pages={19.3.1 - 19.3.4},
keywords={},
doi={10.1109/IEDM.2010.5703389},
ISSN={0163-1918},}



@INPROCEEDINGS{ReRAM_ISSCC2010_Chev,
author={Chevallier, C.J. andothers},
booktitle={Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International},
title={A 0.13um 64Mb multi-layered conductive metal-oxide memory},
year={2010},
month={Feb},
volume={},
number={},
pages={260 -261},
keywords={CMOS circuitry;NAND-compatible nonvolatile memory testchip;decoding;multilayered conductive metal-oxide memory;sensing technique;size 0.13 micron;CMOS memory circuits;NAND circuits;random-access storage;},
doi={10.1109/ISSCC.2010.5433945},
ISSN={0193-6530},}

@INPROCEEDINGS{ReRAM_IEDM2010_Ho,
author={Ho, C. and others},
booktitle={Electron Devices Meeting (IEDM), 2010 IEEE International},
title={9nm half-pitch functional resistive memory cell with $<$1uA programming current using thermally oxidized sub-stoichiometric WOx film},
year={2010},
month={Dec},
volume={},
number={},
pages={19.1.1 -19.1.4},
keywords={functional resistive memory cell;half-pitch functional transition-metal-oxide based resistive random access memory cell;low power non-volatile memory;nano injection lithography technique;programming current;size 9 nm;thermally oxidized sub-stoichiometric film;low-power electronics;nanolithography;random-access storage;stoichiometry;},
doi={10.1109/IEDM.2010.5703389},
ISSN={0163-1918},}

@INPROCEEDINGS{ReRAM_IEDM2010_Chien,
author={Chien, W.C. and others},
booktitle={Electron Devices Meeting (IEDM), 2010 IEEE International},
title={A forming-free WOx resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability},
year={2010},
month={Dec},
volume={},
number={},
pages={19.2.1 -19.2.4},
keywords={ReRAM;TiNOx;WOx;data retention;electric field;field enhancement;forming-free resistive memory;oxidation;reliability;resistive RAM;scalability;self-aligned field enhancement feature;switching mechanism;temperature 150 degC;time -50 ns;time 2000 hr;integrated circuit reliability;oxidation;random-access storage;titanium compounds;tungsten compounds;},
doi={10.1109/IEDM.2010.5703390},
ISSN={0163-1918},}


@INPROCEEDINGS{ReRAM_IEDM2010_Cheng,
author={Cheng, C.H. and others},
booktitle={Electron Devices Meeting (IEDM), 2010 IEEE International},
title={High performance ultra-low energy RRAM with good retention and endurance},
year={2010},
month={Dec},
volume={},
number={},
pages={19.4.1 -19.4.4},
keywords={current 0.1 muA;energy 6 fJ;flash memory;non-volatile memory;power 0.3 muW;power 0.6 nW;switching energy;temperature 125 C;time 20 ns;ultra-low energy RRAM;voltage 3 V;flash memories;low-power electronics;random-access storage;},
doi={10.1109/IEDM.2010.5703392},
ISSN={0163-1918},}

@INPROCEEDINGS{ReRAM_IEDM2010_Lee_Diode,
author={J. Lee and others},
booktitle={Electron Devices Meeting (IEDM), 2010 IEEE International},
title={Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications},
year={2010},
month={Dec},
volume={},
number={},
pages={19.5.1 -19.5.4},
keywords={ZrOx-HfOx;bilayer films;defects-related nonuniform switching;diode-free cross-point array;diodeless nanoscale RRAM device;high density cross-point memory devices;high-density cross-point memory reliability;oxygen vacancy concentration;switching uniformity;hafnium compounds;integrated circuit reliability;nanoelectronics;random-access storage;semiconductor thin films;switching;zinc compounds;},
doi={10.1109/IEDM.2010.5703393},
ISSN={0163-1918},}

@INPROCEEDINGS{ReRAM_IEDM2010_Bers,
author={Bersuker, G. and others},
booktitle={Electron Devices Meeting (IEDM), 2010 IEEE International},
title={Metal oxide RRAM switching mechanism based on conductive filament microscopic properties},
year={2010},
month={Dec},
volume={},
number={},
pages={19.6.1 -19.6.4},
keywords={TiN-HfO2-TiN;conductive filament microscopic properties;filament geometry;grain boundaries;leakage current;metal oxide RRAM switching;temperature profile;grain boundaries;hafnium compounds;leakage currents;random-access storage;titanium compounds;},
doi={10.1109/IEDM.2010.5703394},
ISSN={0163-1918},}

@INPROCEEDINGS{ReRAM_IEDM2010_Lee_Evidence,
author={Lee, H.Y. and others},
booktitle={Electron Devices Meeting (IEDM), 2010 IEEE International}, title={Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance},
year={2010},
month={Dec},
volume={},
number={},
pages={19.7.1 -19.7.4},
keywords={bipolar resistive memory;memory device;memory reliability;over-RESET problem;switching speed;time 300 ps;high-speed integrated circuits;integrated circuit reliability;integrated memory circuits;},
doi={10.1109/IEDM.2010.5703395},
ISSN={0163-1918},}

@INPROCEEDINGS{ReRAM_ISSCC2011_Sheu,
author={Sheu, S. S. and others},
booktitle={Proc. of International Solid-State Circuits Conference (ISSCC)},
title={A 4{M}b Embedded {SLC} Resistive-RAM Macro with 7.2ns Read-Write Random-Access Time and 160ns {MLC}-Access Capability},
pages={200-202},
year={2011},
volume={},
number={},}


@INPROCEEDINGS{ReRAM_ISSCC2011_Otsuka ,
author={W. Otsuka and others},
booktitle={Proc. of International Solid-State Circuits Conference (ISSCC), 2011},
title={A 4{Mb} Conductive-Bridge Resistive Memory with 2.3{GB}/s Read-Throughput and 216{MB}/s Program-Throughput},
volume={},
page = {210 - 211},
number={}, }

@ARTICLE{ReRAM_overview,
author={Akinaga, H. and Shima, H.},
journal={Proceedings of the IEEE},
title={Resistive Random Access Memory ({ReRAM}) Based on Metal Oxides},
year={2010},
month={Dec},
volume={98},
number={12},
pages={2237 -2251},
keywords={CMOS device;ReRAM technology;complementary metal-oxide-semiconductor;electrochemical effect;electronic effect;nonvolatile memories;resistive random access memory;CMOS integrated circuits;random-access storage;},
doi={10.1109/JPROC.2010.2070830},
ISSN={0018-9219},}

@ARTICLE{ReRAM_Renesas,
author={Terai, M. and Sakotsubo, Y. and Saito, Y. and Kotsuji, S. and Hada, H.},
journal={IEEE Electron Device Letters},
title={Memory-State Dependence of Random Telegraph Noise of {Ta2O5/TiO2} Stack {ReRAM}},
year={2010},
month={Nov},
volume={31},
number={11},
pages={1302 -1304},
keywords={ReRAM;Ta2O5-TiO2;bias temperature stress;conduction mechanism;memory state dependence;random telegraph noise;resistance 5 kohm to 20 kohm;resistive random access memory;tunnel barrier;circuit noise;random noise;random-access storage;resistors;tunnelling;},
doi={10.1109/LED.2010.2068033},
ISSN={0741-3106},}
